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| SUD19N20-90 New Product Vishay Siliconix N-Channel 200-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 200 FEATURES ID (A) 19 17.5 rDS(on) (W) 0.090 @ VGS = 10 V 0.105 @ VGS = 6 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D Primary Side Switch D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD19N20-90 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b _ Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IS IAR EAR Symbol VDS VGS Limit 200 "20 19 11 40 19 19 18 100b 3a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambienta Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71767 S-05233--Rev. A, 17-Dec-01 www.vishay.com Steady State RthJA RthJC Symbol Typical 15 40 1.3 Maximum 18 50 1.6 Unit _C/W C/W 1 SUD19N20-90 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V, TJ = 125_C VDS = 160 V, VGS = 0 V, TJ = 175_C On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5 A Drain-Source On-State Resistanceb VGS = 10 V, ID = 5 A, TJ = 125_C rDS(on) VGS = 10 V, ID = 5 A, TJ = 175_C VGS = 6 V, ID = 5 A Forward Transconductanceb gfs VDS = 15 V, ID = 19 A 0.082 35 40 0.075 0.090 0.190 0.260 0.105 S W 200 V 2 "100 1 50 250 A m mA nA Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 100 V, RL = 5.2 W ID ^ 19 A, VGEN = 10 V, RG = 2.5 W VDS = 100 V, VGS = 10 V, ID = 19 A VGS = 0 V, VDS = 25 V, F = 1 MHz 1800 180 80 34 8 12 15 50 30 60 25 75 45 90 ns 42 nC pF Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb ISM VSD trr IF = 19 A, VGS = 0 V IF = 19 A, di/dt = 100 A/ms 0.9 180 50 1.5 250 A V ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71767 S-05233--Rev. A, 17-Dec-01 SUD19N20-90 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 7 V 30 I D - Drain Current (A) I D - Drain Current (A) 6V 30 40 Vishay Siliconix Transfer Characteristics 20 20 TC = 125_C 10 25_C 5V 10 4V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 -55_C 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 70 60 g fs - Transconductance (S) 50 25_C 40 125_C 30 20 10 0 0 10 20 ID - Drain Current (A) 30 40 TC = -55_C r DS(on)- On-Resistance ( W ) 0.15 0.20 On-Resistance vs. Drain Current 0.10 VGS = 6 V VGS = 10 V 0.05 0.00 0 10 20 ID - Drain Current (A) 30 40 Capacitance 2500 20 Gate Charge 2000 C - Capacitance (pF) Ciss 1500 V GS - Gate-to-Source Voltage (V) 16 VDS = 100 V ID = 19 A 12 1000 8 500 Crss 4 Coss 0 0 40 80 120 160 200 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71767 S-05233--Rev. A, 17-Dec-01 www.vishay.com 3 SUD19N20-90 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 3.0 VGS = 10 V ID = 5 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 2.5 r DS(on)- On-Resistance ( W ) (Normalized) 2.0 TJ = 150_C 10 1.5 1.0 TJ = 25_C 0.5 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 25 100 10 ms 100 ms 10 Safe Operating Area 20 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) 15 1 ms 1 TC = 25_C Single Pulse 10 10 ms 100 ms 1 s, dc 5 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com 4 Document Number: 71767 S-05233--Rev. A, 17-Dec-01 |
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